smd type ic www.kexin.com.cn 1 smd type ic tssop-8 unit: mm 1:drain1 2 : source1 3 : source1 4:gate1 5:gate2 6 : source2 7 : source2 8:drain2 mos field effect transistor KPA1871 features can be driven by a 2.5-v power source low on-state resistance r ds(on)1 =26m typ. (v gs =4.5v,i d =3.0a) r ds(on)2 =27m typ. (v gs =4.0v,i d =3.0a) r ds(on)3 =38m typ. (v gs =2.5v,i d =3.0a) built-in g-s protection diode against esd absolute maximum ratings ta = 25 parameter symbol rating unit drain to source voltage (v gs =0) v dss 30 v gate to source voltage (v ds =0) v gss 12 v drain current (dc) i d(dc) 6 a drain current (pulse) *1 i d (pulse) 80 a total power dissipation *2 p t 2.0 w channel temperature t ch 150 storage temperature t stg -55to+150 *1 pw 10 s, duty cycle 1% *2 mounted on ceramic substrate of 50 cm 2 x1.1 mm
www.kexin.com.cn 2 smd type ic smd type ic electrical characteristics ta = 25 parameter symbol testconditons min typ max unit zero gate voltage drain current i dss v ds =30v,v gs =0 10 a gate leakage current i gss v gs = 12 v, v ds =0 10 a gate cut-off voltage v gs(off) v ds =10v,i d = 1 ma 0.5 1.0 1.5 v forward transfer admittance | y fs |v ds =10v,i d =3.0a 5 s r ds(on)1 v ds =4.5v,i d = 3.0 a 15.0 20.5 26.0 m r ds(on)2 v gs =4.0v,i d = 3.0 a 16.0 21.5 27.0 m r ds(on)3 v gs =2.5v,i d = 3.0 a 21.0 27.8 38.0 m input capacitance c iss 930 pf output capacitance c oss 220 pf reverse transfer capacitance c rss 105 pf turn-on delay time t d(on) 55 ns rise time t r 180 ns turn-off delay time t d(off) 260 ns fall time t f 230 ns total gate charge q g 9nc gate to source charge q gs 2nc gate to drain charge q gd 4nc body diode forward voltage v f(s-d) i f =6.0a,v gs = 0 0.80 v reverse recovery time trr i f =6.0a,v gs = 0 v 180 ns reverse recovery charge qrr d i /d t =50a/ s 120 nc v ds =10v,v gs =0,f=1mhz i d =6.0a,v dd = 24v, v gs =4.0v i d =3.0a,v gs(on) =4.0v,v dd =10 v,r g =10 drain to source on-state resistance KPA1871
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